Dopant Activation in Ion-shower-doped Poly-Si
نویسنده
چکیده
Abnormal behavior of dopant activation was observed in P + /B + ion shower doped poly-Si upon post implant annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of PH3/H2 or B2H6/H2. Activation annealing was conducted using a tube furnace in the temperature ranges from 350 o C to 650 o C. Hall measurement revealed that reverse annealing occurred for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at 550 o C in P + ion shower doped poly-Si, while at 350 o C in the case of B-doping. Keywords— Activation, Ion shower doping, LTPS, Reverse annealing, TFTs
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